CHEMICAL ETCHING OF GAAS AND INP BY CHLORINE - THE THERMODYNAMICALLY PREDICTED DEPENDENCE ON CL2 PRESSURE AND TEMPERATURE

被引：135
作者：
MCNEVIN, SC
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 05期
关键词：
D O I：
10.1116/1.583485
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：1216 / 1226
页数：11
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