IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION

被引：229

作者：

CHU, WK

LAU, SS

MAYER, JW

MULLER, H

机构：

[1] CALTECH,PASADENA,CA 91109

[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1975年 / 25卷 / 02期

关键词：

D O I：

10.1016/0040-6090(75)90057-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：393 / 402

页数：10

共 13 条

[1]

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[2] USE OF RUTHERFORD BACKSCATTERING TO STUDY BEHAVIOR OF ION-IMPLANTED ATOMS DURING ANODIC-OXIDATION OF ALUMINUM - AR, KR, XE, K, RB, CS, CL, BR, AND I [J].

BROWN, F ;

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (08) :1096-1102

[3] IDENTIFICATION OF DOMINANT DIFFUSING SPECIES IN SILICIDE FORMATION [J].

CHU, WK ;

KRAUTLE, H ;

MAYER, JW ;

MULLER, H ;

NICOLET, MA ;

TU, KN .

APPLIED PHYSICS LETTERS, 1974, 25 (08) :454-457

[4]

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[5] GROWTH AND TRANSFORMATION OF PD2SI ON (111), (110) AND (100) SI [J].

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SHEPELA, A .

THIN SOLID FILMS, 1973, 18 (02) :343-363

[6] ANALYSIS OF FORMATION OF HAFNIUM SILICIDE ON SILICON [J].

KIRCHER, CJ ;

MAYER, JW ;

TU, KN ;

ZIEGLER, JF .

APPLIED PHYSICS LETTERS, 1973, 22 (02) :81-83

[7]

Kirkendall EO, 1942, T AM I MIN MET ENG, V147, P104

[8]

KRAUTLE H, 1974, APPLICATION ION BEAM

[9] IRON SILICIDE THIN-FILM FORMATION AT LOW-TEMPERATURES [J].

LAU, SS ;

FENG, JSY ;

OLOWOLAFE, JO ;

NICOLET, MA .

THIN SOLID FILMS, 1975, 25 (02) :415-422

[10]

MADER S, TO BE PUBLISHED

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