PATTERNED SILICON MOLECULAR-BEAM EPITAXY WITH SUB-MICRON LATERAL RESOLUTION

被引：18

作者：

BEAN, JC

ROZGONYI, GA

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 08期

关键词：

D O I：

10.1063/1.93666

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：752 / 755

页数：4

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