PATTERNED SILICON MOLECULAR-BEAM EPITAXY WITH SUB-MICRON LATERAL RESOLUTION

被引：18
作者：
BEAN, JC
ROZGONYI, GA
机构：
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 08期
关键词：
D O I：
10.1063/1.93666
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：752 / 755
页数：4
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