IRON-OXIDE - INORGANIC PHOTORESIST AND MASK MATERIAL

被引：14

作者：

SINCLAIR, WR ^{[1
]}

ROUSSEAU, DL ^{[1
]}

STANCAVI.JJ ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1974年 / 121卷 / 07期

关键词：

D O I：

10.1149/1.2401954

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：925 / 928

页数：4

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[4]

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[5]

HILL BH, 1969, J ELECTROCHEM SOC, V115, P668

[6] FE2O3 - INORGANIC ELECTRON RESIST MATERIAL [J].

KAMMLOTT, GW ;

SINCLAIR, WR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (07) :929-932

[7] CHEMICAL VAPOR DEPOSITION OF IRON OXIDE FILMS FOR USE AS SEMITRANSPARENT MASKS [J].

MACCHESNEY, JB ;

OCONNOR, PB ;

SULLIVAN, MV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (05) :776-+

[8] FABRICATION OF PLANAR SILICON TRANSISTORS WITHOUT PHOTORESIST [J].

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HANDY, RM .

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[9] SPUTTERED FE2O3 FILMS FOR USE IN SEE THROUGH MASKS [J].

PETERS, FG ;

SINCLAIR, WR ;

SULLIVAN, MV .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (03) :305-&

[10]

SULLIVAN MP, PERSONAL COMMUNICATI

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