SHALLOW DONOR FORMATION IN SI PRODUCED BY PROTON BOMBARDMENT

被引：50

作者：

OHMURA, Y ^{[1
]}

ZOHTA, Y ^{[1
]}

KANAZAWA, M ^{[1
]}

机构：

[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA R & D CTR,KAWASAKI,JAPAN

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 15卷 / 01期

关键词：

D O I：

10.1002/pssa.2210150110

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：93 / 98

页数：6

共 9 条

[1]

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KAUS, PE .

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[3] ELECTRICAL PROPERTIES OF N-TYPE SI LAYERS DOPED WITH PROTON BOMBARDMENT INDUCED SHALLOW DONORS [J].

OHMURA, Y ;

ZOHTA, Y ;

KANAZAWA, M .

SOLID STATE COMMUNICATIONS, 1972, 11 (01) :263-&

[4]

Pruniaux B.R., 1971, [No title captured], P212

[5] THEORY OF THE IONIZATION OF HYDROGEN AND LITHIUM IN SILICON AND GERMANIUM [J].

REISS, H .

JOURNAL OF CHEMICAL PHYSICS, 1956, 25 (04) :681-686

[6] SHALLOW DONOR STATE PRODUCED BY PROTON BOMBARDMENT OF SILICON [J].

ZOHTA, Y ;

OHMURA, Y ;

KANAZAWA, M .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (04) :532-&

[7] A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORS [J].

ZOHTA, Y .

APPLIED PHYSICS LETTERS, 1970, 17 (07) :284-&

[8] DETERMINATION OF SPATIAL-DISTRIBUTION OF DEEP CENTERS FROM CAPACITANCE MEASUREMENTS OF PN JUNCTIONS [J].

ZOHTA, Y ;

OHMURA, Y .

APPLIED PHYSICS LETTERS, 1972, 21 (03) :117-+

[9]

[No title captured]

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