SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS

被引：45

作者：

CULLIS, AG ^{[1
]}

WEBBER, HC ^{[1
]}

POATE, JM ^{[1
]}

SIMONS, AL ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1980年 / 36卷 / 04期

关键词：

D O I：

10.1063/1.91478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：320 / 322

页数：3

共 15 条

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[3] SPATIALLY CONTROLLED CRYSTAL REGROWTH OF ION-IMPLANTED SILICON BY LASER IRRADIATION [J].

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[4]

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[5] DEVICE FOR LASER-BEAM DIFFUSION AND HOMOGENIZATION [J].

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BAILEY, P .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1979, 12 (08) :688-689

[6]

CULLIS AG, UNPUBLISHED

[7]

CULLIS AG, 1979, LASER SOLID INTERACT, P311

[8] STRUCTURE AND PROPERTIES OF GLASSY METALS [J].

DUWEZ, P .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1976, 6 :83-117

[9]

JACKSON KA, 1979, LASER SOLID INTERACT, P102

[10]

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