HIGH-TEMPERATURE (GREATER-THAN-150-DEGREES-C) AND LOW THRESHOLD CURRENT OPERATION OF ALGAINP/GAXIN1-XP STRAINED MULTIPLE QUANTUM-WELL VISIBLE LASER-DIODES

被引:0
|
作者
KATSUYAMA, T
YOSHIDA, I
SHINKAI, J
HASHIMOTO, J
HAYASHI, H
机构
来源
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 120期
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
High temperature and very low threshold current operation of separate confinement heterostructure AlGaInP/GaxIn1-xP (x = 0.43) strained multiple quantum well lasers has been achieved. Continuous, wave (cw) operation was observed up to at least 150-degrees-C with an output power of more than 7mW, which is the highest cw operating temperature ever reported for devices operating in the visible wavelength region. The characteristic temperature was 130K (20 - 80-degrees-C) and the threshold current at 25-degrees-C was 13.9mA.
引用
收藏
页码:643 / 646
页数:4
相关论文
共 37 条
  • [11] LOW CURRENT THRESHOLD ALGAAS VISIBLE LASER-DIODES WITH AN (ALGAAS)M(GAAS)N SUPERLATTICE QUANTUM-WELL
    HAYAKAWA, T
    SUYAMA, T
    TAKAHASHI, K
    KONDO, M
    YAMAMOTO, S
    HIJIKATA, T
    APPLIED PHYSICS LETTERS, 1986, 49 (11) : 636 - 638
  • [12] OPTIMIZATION OF 670-NM STRAINED-QUANTUM-WELL LASER-DIODES FOR HIGH-TEMPERATURE OPERATION
    SMOWTON, PM
    SUMMERS, HD
    REES, P
    BLOOD, P
    IEE PROCEEDINGS-OPTOELECTRONICS, 1994, 141 (02): : 136 - 140
  • [13] HIGH-TEMPERATURE (77-DEGREES-C) OPERATION OF 634 NM INGAALP MULTI-QUANTUM-WELL LASER-DIODES WITH TENSILE-STRAINED QUANTUM-WELLS
    WATANABE, M
    RENNIE, J
    OKAJIMA, M
    HATAKOSHI, G
    APPLIED PHYSICS LETTERS, 1993, 63 (11) : 1486 - 1488
  • [14] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR COUPLED MULTIPLE QUANTUM-WELL IN1-XGAXP1-ZASZ-INP HETEROSTRUCTURE LASER-DIODES
    REZEK, EA
    HOLONYAK, N
    FULLER, BK
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2402 - 2405
  • [15] LOW THRESHOLD CURRENT HIGH-TEMPERATURE OPERATION OF INGAAS ALGAAS STRAINED-QUANTUM-WELL LASERS
    DERRY, PL
    HAGER, HE
    CHIU, KC
    BOOHER, DJ
    MIAO, EC
    HONG, CS
    IEEE PHOTONICS TECHNOLOGY LETTERS, 1992, 4 (11) : 1189 - 1191
  • [16] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES
    CHIN, R
    HOLONYAK, N
    VOJAK, BA
    HESS, K
    DUPUIS, RD
    DAPKUS, PD
    APPLIED PHYSICS LETTERS, 1980, 36 (01) : 19 - 21
  • [17] High-temperature and low-threshold-current operation of 1.5 μm AlGaInAs/InP strain-compensated multiple quantum well laser diodes
    Lin, CC
    Liu, KS
    Wu, MC
    Shiao, HP
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (6A): : 3309 - 3312
  • [18] HIGH-TEMPERATURE (74-DEGREES-C) CW OPERATION OF 634 NM INGAALP LASER-DIODES UTILIZING A MULTIPLE-QUANTUM BARRIER
    RENNIE, J
    OKAJIMA, M
    WATANABE, M
    HATAKOSHI, G
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1857 - 1862
  • [19] ALGAINP STRAINED MULTIPLE-QUANTUM-WELL VISIBLE LASER-DIODES (LAMBDA(L)LESS-THAN-OR-EQUAL-TO-630-NM-BAND) WITH A MULTIQUANTUM BARRIER GROWN ON MISORIENTED SUBSTRATES
    HAMADA, H
    HIROYAMA, R
    HONDA, S
    SHONO, M
    YODOSHI, K
    YAMAGUCHI, T
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) : 1844 - 1850
  • [20] Room-Temperature Operation of 2.4 μm InGaAsSb/AlGaAsSb Quantum-Well Laser Diodes with Low-Threshold Current Density
    Xing Jun-Liang
    Zhang Yu
    Liao Yong-Ping
    Wang Juan
    Xiang Wei
    Xu Ying-Qiang
    Wang Guo-Wei
    Ren Zheng-Wei
    Niu Zhi-Chuan
    CHINESE PHYSICS LETTERS, 2014, 31 (05)