MONOLAYER EPITAXY OF ZNSE ON GAAS SUBSTRATES BY ALTERNATING ADSORPTION OF DIETHYLZINC AND HYDROGENSELENIDE

被引：17

作者：

SHIBATA, N

KATSUI, A

机构：

[1] NTT Optoelectronics Laboratories, Nippon Telegraph and Telephone Corporation, Tokai, Ibaraki-ken

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90943-F

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth of ZnSe films on GaAs using an alternating supply of diethylzinc (DEZ) and H2Se in low-pressure MOVPE has been examined as a function of substrate temperature (Ts). Growth rate in the low-Ts region (less than 350°C) increased monotonically with increasing DEZ flow-rate. At temperatures between 350 and 400°C growth rate per operational cycle saturated at the monolayer thickness. In the high-Ts region, more than 400°C, growth rate per cycle saturated at less than a monolayer. Growth kinetics resulted from the strong reaction between DEZ and H2Se on the growing surface. ZnSe layers grown by monolayer unit exhibited high purity and crystallinity. © 1989.

引用

页码：91 / 95

页数：5

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