共 19 条
- [1] LUMINESCENCE IN INTRINSIC AND ANNEALED ELECTRON-IRRADIATED GAAS - CD [J]. PHYSICAL REVIEW, 1969, 183 (03): : 777 - &
- [2] RADIATIVE RECOMBINATION IN ANNEALED ELECTRON-IRRADIATED GAAS [J]. PHYSICAL REVIEW, 1966, 149 (02): : 679 - &
- [3] EFFECTS OF CO-60 GAMMA IRRADIATION ON EPITAXIAL GAAS LASER DIODES [J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (12): : 4735 - +
- [4] BRAILOVSKI EY, 1971, SOV PHYS SEMICOND+, V5, P563
- [6] INTERNAL RADIATIVE EFFICIENCY AND MECHANISM OF TEMPERATURE QUENCHING OF 1.03, 1.20, AND 1.30 EV EMISSION BANDS IN N-GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1976, 34 (02): : 777 - 786
- [7] ROLE OF DIFFERENT LOCAL CENTERS IN DETERMINATION OF CONCENTRATION-DEPENDENCE OF INTRINSIC EMISSION INTENSITY IN N-TYPE GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 45 (02): : K91 - K94
- [8] STUDY OF NONLINEAR EXTRINSIC LUMINESCENCE IN GAAS .2. ROLE OF AUGER RECOMBINATION [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 51 (02): : 645 - 655
- [9] EFFECT OF 0.94, 1.0, 1.2, AND 1.3 EV RADIATIVE CENTERS ON INTRINSIC LUMINESCENCE INTENSITY IN N-GAAS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 44 (02): : 777 - 785