INCREASING EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XAS

被引：36

作者：

MORGAN, DV

FREY, J

机构：

[1] School of Electrical Engineering Cornell University, Ithaca

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 23期

关键词：

III-V semiconductors; Schottky-gate field-effect boundaries; Semiconductor-metal boundaries; Work function;

D O I：

10.1049/el:19780499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter it is shown that thin interfacial oxide layers may be used to increase the effective barrier height of Au/InP and Au/InGaAs Schottky barriers. These results confirm earlier studies on InP and extend the technique to InGaAs. © 1978, The Institution of Electrical Engineers. All rights reserved.

引用

页码：737 / 738

页数：2

共 9 条

[1] NOTE ON EVALUATION OF SCHOTTKY DIODE PARAMETERS IN PRESENCE OF AN INTERFACIAL LAYER
ASHOK, S
BORREGO, JM
GUTMANN, RJ
[J]. ELECTRONICS LETTERS, 1978, 14 (11) : 332 - 333
[2] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES
CARD, HC
RHODERICK, EH
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) : 1589 - +
[3] DEAMALEY G, 1970, REP PROG PHYS, V33, P1129
[4] SCHOTTKY-BARRIER HEIGHT OF N-INXGA1-XAS DIODES
KAJIYAMA, K
MIZUSHIMA, Y
SAKATA, S
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 458 - 459
[5] MORGAN DP, UNPUBLISHED
[6] INFLUENCE OF A THIN OXIDE LAYER BETWEEN METAL AND SEMICONDUCTOR ON SCHOTTKY DIODE BEHAVIOR
NICOLLIAN, EH
SCHWARTZ, B
COLEMAN, DJ
RYDER, RM
BREWS, JR
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (05): : 1047 - 1055
[7] DEPENDENCE OF BARRIER HEIGHT OF METAL SEMICONDUCTOR CONTACT (AU-GAAS) ON THICKNESS OF SEMICONDUCTOR SURFACE-LAYER
PRUNIAUX, BR
ADAMS, AC
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (04) : 1980 - &
[8] SASAKI A, 1976, SEP P SOL STAT DEV C
[9] LOW LEAKAGE NEARLY IDEAL SCHOTTKY BARRIERS TO N-INP
WADA, O
MAJERFELD, A
[J]. ELECTRONICS LETTERS, 1978, 14 (05) : 125 - 126

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