INCREASING EFFECTIVE BARRIER HEIGHT OF SCHOTTKY CONTACTS TO N-INXGA1-XAS

被引：36
作者：
MORGAN, DV
FREY, J
机构：
[1] School of Electrical Engineering Cornell University, Ithaca
来源：
ELECTRONICS LETTERS | 1978年 / 14卷 / 23期
关键词：
III-V semiconductors; Schottky-gate field-effect boundaries; Semiconductor-metal boundaries; Work function;
D O I：
10.1049/el:19780499
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter it is shown that thin interfacial oxide layers may be used to increase the effective barrier height of Au/InP and Au/InGaAs Schottky barriers. These results confirm earlier studies on InP and extend the technique to InGaAs. © 1978, The Institution of Electrical Engineers. All rights reserved.
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页码：737 / 738
页数：2
相关论文
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