RESIDUAL DEFECTS IN IMPLANTED LAYERS ON SILICON AFTER HIGH-TEMPERATURE ANNEALING

被引：2
作者：
GERASIMENKO, NN
KALININ, VV
STENIN, SI
机构：
来源：
RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1978年 / 37卷 / 3-4期
关键词：
D O I：
10.1080/00337577808233185
中图分类号：
TL [原子能技术]; O571 [原子核物理学];
学科分类号：
0827 ; 082701 ;
摘要：
引用
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页码：167 / 172
页数：6
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