EFFECTS OF ION-BEAM MIXING ON THE EPITAXIAL-GROWTH OF MOSI2 ON SI(111)

被引：6

作者：

CHENG, JY ^{[1
]}

CHENG, HC ^{[1
]}

CHEN, LJ ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT ELECTR ENGN,HSINCHU 300,TAIWAN

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339255

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3722 / 3725

页数：4

共 18 条

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[3]

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[7]

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[8] GROWTH-KINETICS AND GROWTH MECHANISMS FOR DISILICIDE LAYERS OBTAINED THROUGH IMPLANTATION [J].

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[9] REFRACTORY-METAL SILICIDE FORMATION BY ION-BEAM MIXING AND RAPID THERMAL ANNEALING [J].

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