METASTABLE IMPURITY BANDS - CONDUCTION IN SI1-XCOX AND SI1-XNIX ALLOY-FILMS

被引:14
作者
COLLVER, MM [1 ]
机构
[1] GM CORP,RES LABS,WARREN,MI 48090
关键词
D O I
10.1016/0038-1098(77)91340-0
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:333 / 335
页数:3
相关论文
共 9 条
[1]   SEMICONDUCTOR-TO-METAL TRANSITION IN N-TYPE GROUP 4 SEMICONDUCTORS [J].
ALEXANDER, MN ;
HOLCOMB, DF .
REVIEWS OF MODERN PHYSICS, 1968, 40 (04) :815-+
[2]   ELECTRICAL-CONDUCTION IN HEAVILY DOPED GERMANIUM [J].
ALLEN, FR ;
ADKINS, CJ .
PHILOSOPHICAL MAGAZINE, 1972, 26 (04) :1027-&
[3]  
AMBEGAOKAR V, 1974, PHYS REV B, V4, P2619
[4]   METAL TO NONMETAL TRANSITIONS IN DOPED GERMANIUM AND SILICON [J].
BERGGREN, KF .
PHILOSOPHICAL MAGAZINE, 1973, 27 (05) :1027-1040
[5]   DIELECTRIC ANOMALY AND METAL-INSULATOR TRANSITION IN N-TYPE SILICON [J].
CASTNER, TG ;
LEE, NK ;
CIELOSZYK, GS ;
SALINGER, GL .
PHYSICAL REVIEW LETTERS, 1975, 34 (26) :1627-1630
[6]   CONDUCTION IN NON-CRYSTALLINE MATERIALS .3. LOCALIZED STATES IN A PSEUDOGAP AND NEAR EXTREMITIES OF CONDUCTION AND VALENCE BANDS [J].
MOTT, NF .
PHILOSOPHICAL MAGAZINE, 1969, 19 (160) :835-&
[7]  
SZE SM, 1969, PHYSICS SEMICONDUCTO, P30
[8]   PHONON-ASSISTED TRANSITIONS TO A TEMPERATURE-INDEPENDENT DEEP LEVEL IN CO-SI [J].
WONG, DC ;
PENCHINA, CM .
APPLIED PHYSICS LETTERS, 1974, 25 (08) :466-467
[9]  
WONG DC, 1975, APPL PHYS LETT, V28, P142