RELAXATION EFFECTS ON DONOR SPINS IN SILICON AND GERMANIUM

被引：8
作者：
NAKAYAMA, M
HASEGAWA, H
机构：
来源：
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1963年 / 18卷 / 02期
关键词：
D O I：
10.1143/JPSJ.18.229
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
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页码：229 / +
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