MICROSCOPY OF SEMI-INSULATING GALLIUM-ARSENIDE

被引：15

作者：

AUGUSTUS, PD

STIRLAND, DJ

机构：

来源：

JOURNAL OF MICROSCOPY | 1980年 / 118卷 / JAN期

关键词：

D O I：

10.1111/j.1365-2818.1980.tb00253.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：111 / 116

页数：6

共 12 条

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[10] REVIEW OF ETCHING AND DEFECT CHARACTERIZATION OF GALLIUM-ARSENIDE SUBSTRATE MATERIAL [J].

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