DEFECT REDUCTION IN STRAINED INXGA1-XAS VIA GROWTH ON GAAS (100) SUBSTRATES PATTERNED TO SUBMICRON DIMENSIONS

被引：30

作者：

GUHA, S ^{[1
]}

MADHUKAR, A ^{[1
]}

CHEN, L ^{[1
]}

机构：

[1] UNIV SO CALIF,DEPT PHYS,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 23期

关键词：

D O I：

10.1063/1.102948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The misfit dislocation (MD) behavior of InxGa1-xAs (x≤0.15) grown via molecular beam epitaxy on GaAs(100) substrates containing parallel mesas of ultrasmall widths (0.6-1.3 μm) is examined via cross-sectional transmission electron microscope studies. A virtual absence of MDs running perpendicular to the mesa widths is found even though the film thicknesses are significantly larger than the so-called critical thickness for growth on nonpatterned substrates. In the nonpatterned regions of the substrate the mean separation of such MDs is ∼1500 Å and ∼940 Å for x=0.11 and x=0.15, respectively. The defect reduction observed is discussed in light of intrinsic effects relating to growth kinetics and strain relief at mesa edges and/or reduced dislocation multiplication occurring on the mesas.

引用

页码：2304 / 2306

页数：3

共 10 条

[1] NUCLEATION MECHANISMS AND THE ELIMINATION OF MISFIT DISLOCATIONS AT MISMATCHED INTERFACES BY REDUCTION IN GROWTH AREA [J].