ATOMIC LAYER DOPED FIELD-EFFECT TRANSISTOR FABRICATED USING SI MOLECULAR-BEAM EPITAXY

被引：54

作者：

NAKAGAWA, K

VANGORKUM, AA

SHIRAKI, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 19期

关键词：

D O I：

10.1063/1.101263

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1869 / 1871

页数：3

共 10 条

[1] BORON SURFACE SEGREGATION IN SILICON MOLECULAR-BEAM EPITAXY [J].

DEFRESART, E ;

WANG, KL ;

RHEE, SS .

APPLIED PHYSICS LETTERS, 1988, 53 (01) :48-50

[2] SHARP PROFILES WITH HIGH AND LOW DOPING LEVELS IN SILICON GROWN BY MOLECULAR-BEAM EPITAXY [J].

IYER, SS ;

METZGER, RA ;

ALLEN, FG .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5608-5613

[3] SI-MBE - GROWTH AND SB DOPING [J].

KONIG, U ;

KIBBEL, H ;

KASPER, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (04) :985-989

[4]

SHUBERT EF, 1985, JPN J APPL PHYS, V24, pL608

[5]

SHUBERT EG, 1986, IEEE T ELECT DEVICE, V33, P625

[6] ELECTRONIC STATES AND TRANSPORT-PROPERTIES OF AN N-TYPE DELTA-FUNCTION DOPING LAYER IN P-TYPE SI [J].

TEMPEL, G ;

KOCH, F ;

ZEINDL, HP ;

EISELE, I .

JOURNAL DE PHYSIQUE, 1987, 48 (C-5) :259-262

[7] GROWTH AND CHARACTERIZATION OF ATOMIC LAYER DOPING STRUCTURES IN SI [J].

VANGORKUM, AA ;

NAKAGAWA, K ;

SHIRAKI, Y .

JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) :2485-2492

[8] CONTROLLED ATOMIC LAYER DOPING AND ALD-MOSFET FABRICATION IN SI [J].

VANGORKUM, AA ;

NAKAGAWA, K ;

SHIRAKI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12) :L1933-L1936

[9]

YAMGUCHI K, 1983, JPN J APPL PHYS S, V22, P267

[10]

ZRENNER A, 1984, 17TH P INT C PHYS SE, P325

← 1 →