STRAIN-INDUCED 2-DIMENSIONAL ELECTRON-GAS IN [111] GROWTH-AXIS STRAINED-LAYER STRUCTURES

被引：49

作者：

SNOW, ES

SHANABROOK, BV

GAMMON, D

机构：

[1] Naval Research Laboratory

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 08期

关键词：

D O I：

10.1063/1.102704

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is demonstrated that strain-induced electric fields in [111] growth-axis strained-layer structures can be used to induce a two-dimensional electron gas without the necessity of modulation doping. A simple analytic expression is derived for the density of the two-dimensional electron gas. The density has a simple linear relationship to the strain-induced electric fields. The calculation predicts that two-dimensional densities in the range 10 11-1012 cm-2 should be easily realized in strained-layer structures. Results are calculated for a variety of material systems.

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页码：758 / 760

页数：3

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