ZERO BIAS ANOMALY IN TUNNEL RESISTANCE AND ELECTRON-ELECTRON INTERACTION

被引：429
作者：
ALTSHULER, BL
ARONOV, AG
机构：
[1] Leningrad Nuclear Physics Institute Gatchina, Leningrad
来源：
SOLID STATE COMMUNICATIONS | 1979年 / 30卷 / 03期
关键词：
D O I：
10.1016/0038-1098(79)90967-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this paper we consider the properties of the disordered systems, when the mean free path of electrons is more or comparable with its wave length, i.e. some higher the localization edge. It is shown that the electron-electron interaction in this situation leads to an anomaly in the density of states near the Fermi level. We argue that this anomaly causes that of the tunnel resistance. The minimum in the temperature dependence of the resistivity in the disordered metals may also be due to a similar mechanism. © 1979.
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页码：115 / 117
页数：3
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