INVERSION OF N-TYPE GAAS-SURFACES USING A SILICON-SILICON DIOXIDE INSULATOR STRUCTURE

被引：9
作者：
HATTANGADY, SV
FOUNTAIN, GG
VITKAVAGE, DJ
RUDDER, RA
MARKUNAS, RJ
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 07期
关键词：
D O I：
10.1149/1.2097175
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
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页码：2070 / 2073
页数：4
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