CHARACTERIZATION OF THE SILICON-ON-INSULATOR MATERIAL FORMED BY HIGH-DOSE OXYGEN IMPLANTATION USING SPECTROSCOPIC ELLIPSOMETRY

被引：20

作者：

FERRIEU, F ^{[1
]}

VU, DP ^{[1
]}

DANTERROCHES, C ^{[1
]}

OBERLIN, JC ^{[1
]}

MAILLET, S ^{[1
]}

GROB, JJ ^{[1
]}

机构：

[1] CTR RECH NUCL,PHASE GRP,F-67037 STRASBOURG,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期

关键词：

D O I：

10.1063/1.339317

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

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页码：3458 / 3461

页数：4

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共 27 条

[1] OPTIMIZING PRECISION OF ROTATING-ANALYZER ELLIPSOMETERS
ASPNES, DE
[J]. JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1974, 64 (05) : 639 - 646
[2] INVESTIGATION OF EFFECTIVE-MEDIUM MODELS OF MICROSCOPIC SURFACE-ROUGHNESS BY SPECTROSCOPIC ELLIPSOMETRY
ASPNES, DE
THEETEN, JB
[J]. PHYSICAL REVIEW B, 1979, 20 (08): : 3292 - 3302
[3] OPTICAL-PROPERTIES OF THIN-FILMS
ASPNES, DE
[J]. THIN SOLID FILMS, 1982, 89 (03) : 249 - 262
[4] DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV
ASPNES, DE
STUDNA, AA
[J]. PHYSICAL REVIEW B, 1983, 27 (02) : 985 - 1009
[5] ASPNES DE, 1975, APPL OPT, V14, P1220
[6] ASPNES DE, 1981, SPIE P, V276, P188
[7] ASPNES DE, 1975, J OPT SOC AM, V64, P812
[8] SUBTHRESHOLD SLOPE OF THIN-FILM SOI MOSFETS
COLINGE, JP
[J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 244 - 246
[9] COLINGE JP, 1986, ELECTRON LETT, V22, P177
[10] OPTICAL-PROPERTIES OF DENSE THIN-FILM SI AND GE PREPARED BY ION-BEAM SPUTTERING
COLLINS, RW
WINDISCHMANN, H
CAVESE, JM
GONZALEZHERNANDEZ, J
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) : 954 - 957