PROPERTIES OF BE-IMPLANTED PLANAR GAAS P-N-JUNCTIONS

被引：18

作者：

HELIX, MJ ^{[1
]}

VAIDYANATHAN, KV ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,URBANA,IL 61801

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1978年 / 13卷 / 04期

关键词：

D O I：

10.1109/JSSC.1978.1051072

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：426 / 429

页数：4

共 21 条

[1]

Ahrenkiel R. K., 1976, International Electron Devices Meeting. (Technical digest), P426

[2] LATERAL DIFFUSION OF ZINC AND TIN IN GALLIUM-ARSENIDE [J].

BALIGA, BJ ;

GHANDHI, SK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1974, ED21 (07) :410-415

[3] TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE FROM BE-IMPLANTED GAAS [J].

CHATTERJEE, PK ;

MCLEVIGE, WV ;

VAIDYANATHAN, KV ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :509-512

[4] REDUCED LATERAL DIFFUSION AND REVERSE LEAKAGE IN BE-IMPLANTED GAAS1-XPX DIODES [J].

CHATTERJEE, PK ;

STREETMAN, BG .

SOLID-STATE ELECTRONICS, 1977, 20 (04) :305-&

[5]

CHATTERJEE PK, 1975, INT EL DEV M, P187

[6]

EDEN RC, 1977, JUN IEEE DEV RES C

[7] OUTDIFFUSION THROUGH SILICON OXIDE AND SILICON NITRIDE LAYERS ON GALLIUM ARSENIDE [J].

GYULAI, J ;

MAYER, JW ;

MITCHELL, IV ;

RODRIGUEZ, V .

APPLIED PHYSICS LETTERS, 1970, 17 (08) :332-+

[8]

HELIX MJ, UNPUBLISHED

[9]

HELIX MJ, 1977, IEDM TECH DIG, P195

[10] MG AND BE ION IMPLANTED GAAS [J].

HUNSPERGER, RG ;

JAMBA, DM ;

WILSON, RG .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) :1318-+

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