Effect of TCO, BSF and Back contact Barrier on CdS/CdTe solar cell: Modeling and Simulation

We have commenced an in-depth study through modeling and simulation to investigate the performance of a CdTe solar cell at different Schottky barrier heights for different combinations thicknesses of BSF as well as window layer and front contact oxide layer (TCO). The inter relation between BSF layer and back contact schottky barrier height has been focused. Effect of the BSF layer regarding the tunneling of charges has been investigated. In the present paper, we achieved in our study the highest. of 18.39%, V-oc of 0.591 volt, I-sc of 0.411 amp for 0.1 mu m absorber and 1 nm BSF layer thickness in presence of higher schottky barrier (0.6eV) with higher doping concentration of absorber layer. Thinning of the layers have always been better in terms of performance and cost. But it brings pinhole formation problems what we excluded here in our present work.