ANOMALOUS OXIDATION RATE OF SILICON IMPLANTED WITH VERY HIGH-DOSES OF ARSENIC

被引：11

作者：

CHOI, SS ^{[1
]}

NUMAN, MZ ^{[1
]}

CHU, WK ^{[1
]}

IRENE, EA ^{[1
]}

机构：

[1] UNIV N CAROLINA,DEPT CHEM,CHAPEL HILL,NC 27514

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 13期

关键词：

D O I：

10.1063/1.98812

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1001 / 1003

页数：3

共 13 条

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[2]

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[6] KINETICS OF THERMAL GROWTH OF HCI-O2 OXIDES ON SILICON [J].

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[7] THERMAL-OXIDATION OF HEAVILY PHOSPHORUS-DOPED SILICON [J].

HO, CP ;

PLUMMER, JD ;

MEINDL, JD ;

DEAL, BE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (04) :665-671

[8] SI-SIO2 INTERFACE OXIDATION-KINETICS - PHYSICAL MODEL FOR THE INFLUENCE OF HIGH SUBSTRATE DOPING LEVELS .1. THEORY [J].

HO, CP ;

PLUMMER, JD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1516-1522

[9] SILICON OXIDATION STUDIES - OXIDATION OF HEAVILY B-DOPED AND P-DOPED SINGLE-CRYSTAL SILICON [J].

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[10]

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