PHOTOEMISSION-STUDIES OF K-PROMOTED NITRIDATION OF INP(100) SURFACE USING SYNCHROTRON-RADIATION

被引：0
作者：
ZHAO, TX
JI, H
LIANG, Q
WANG, XP
XU, PS
LU, ED
WU, JX
XU, ZJ
机构：
[1] USTC,NATL SYNCHROTRON RADIAT LAB,HEFEI 230027,PEOPLES R CHINA
[2] ACAD SINICA,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA
来源：
CHINESE PHYSICS LETTERS | 1994年 / 11卷 / 11期
关键词：
D O I：
10.1088/0256-307X/11/11/011
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The effect of molecular nitrogen exposure on the surfaces of InP(100) modified by potassium overlayers is investigated by core-level and valence-band photoemission spectroscopy using Synchrotron radiation. In comparison with InP(110) surface, we found the promotion is much stronger for InP(100) surface due to the central role of surface defects in the promotion; furthermore, in contrast with K-promoted oxidation of InP(100) where the bonding is observed between indium and oxygen, indium atoms did not react directly with nitrogen atoms during the K-promoted nitridation of InP(100).
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页码：697 / 700
页数：4
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