A STUDY OF HIGH-POWER PULSED CHARACTERISTICS OF LOW-NOISE GAAS-MESFETS

被引：10

|

作者：

JAMES, DS

DORMER, L

机构：

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1981年 / 29卷 / 12期

关键词：

D O I：

10.1109/TMTT.1981.1130556

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1298 / 1310

页数：13

相关论文

共 50 条

[41] OUTPUT IMPEDANCE FREQUENCY DISPERSION AND LOW-FREQUENCY NOISE IN GAAS-MESFETS
GITLIN, D
VISWANATHAN, CR
ABIDI, AA
JOURNAL DE PHYSIQUE, 1988, 49 (C-4): : 201 - 204
[42] EMPIRICAL DETERMINATION OF THE NOISE-FIGURE OF GAAS-MESFETS
AHMED, MK
FREQUENZ, 1984, 38 (12) : 313 - 317
[43] LOW-FREQUENCY OSCILLATIONS IN GAAS-MESFETS
ABDALA, MA
JONES, BK
SOLID-STATE ELECTRONICS, 1993, 36 (02) : 237 - 245
[44] NOISE CHARACTERIZATION OF GAAS-MESFETS FOR THE DESIGN OF OPTICAL AMPLIFIERS
PERRI, AG
ARMENISE, MN
CORSI, F
OPTICAL ENGINEERING, 1990, 29 (04) : 385 - 390
[45] OPTIMAL NOISE-FIGURE OF MICROWAVE GAAS-MESFETS
FUKUI, H
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) : 1032 - 1037
[46] PULSED IV CHARACTERIZATION OF POWER GAAS-MESFETS WITH DOUBLE-RECESSED GATE STRUCTURE
ASANO, K
MATSUNAGA, K
TAKAHASHI, H
KANAMORI, M
HIRAYAMA, H
MOCHIZUKI, A
NEC RESEARCH & DEVELOPMENT, 1992, 33 (03): : 280 - 285
[47] COMPARISON OF 1/F NOISE OF ALGAAS/GAAS HEMTS AND GAAS-MESFETS
TACANO, M
SUGIYAMA, Y
SOLID-STATE ELECTRONICS, 1991, 34 (10) : 1049 - 1053
[48] 12 GHZ HIGH-POWER GAAS/SI MESFETS
CHARASSE, MN
BARTENLIAN, B
GERARD, B
HIRTZ, JP
LAVIRON, M
DEPARSCAU, AM
DEREVONKO, M
DELAGEBEAUDEUF, D
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L1896 - L1898
[49] MICROWAVE NOISE CHARACTERIZATION OF GAAS-MESFETS - DETERMINATION OF EXTRINSIC NOISE PARAMETERS
GUPTA, MS
GREILING, PT
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (04) : 745 - 751
[50] REALIZATION OF VERY HIGH TRANSCONDUCTANCE GAAS-MESFETS
GODTS, P
VANBREMEERSCH, J
CONSTANT, E
ZIMMERMANN, J
ELECTRONICS LETTERS, 1988, 24 (13) : 775 - 776

← 1 2 3 4 5 →