RESONANCE IONIZATION MASS-SPECTROMETRY OF DEVICE MATERIALS

被引:0
作者
DOWNEY, SW
EMERSON, AB
KOPF, RF
SCHUBERT, EF
机构
来源
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1992年 / 128期
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中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Resonance ionization mass spectrometry (RIMS) is used to depth profile devices and device substrates of exceedingly complicated structures which are difficult to characterize by conventional analytical techniques. Of particular interest in many advanced devices is the location of non-metal dopants such as carbon. The high energy levels and ionization potential of non-metals makes RIMS of C difficult. Carbon-doped devices are compared with Be doped devices. RIMS profiles are assoiciated with improved device performance.
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页码:255 / 258
页数:4
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