OPTICALLY MONITORING AND CONTROLLING EPITAXIAL-GROWTH

被引：29

作者：

ASPNES, DE ^{[1
]}

BHAT, R ^{[1
]}

CANEAU, C ^{[1
]}

COLAS, E ^{[1
]}

FLOREZ, LT ^{[1
]}

GREGORY, S ^{[1
]}

HARBISON, JP ^{[1
]}

KAMIYA, I ^{[1
]}

KERAMIDAS, VG ^{[1
]}

KOZA, MA ^{[1
]}

PUDENZI, MAA ^{[1
]}

QUINN, WE ^{[1
]}

SCHWARZ, SA ^{[1
]}

TAMARGO, MC ^{[1
]}

TANAKA, H ^{[1
]}

机构：

[1] UNIV CAMPINAS, IFGW, BR-13081 CAMPINAS, SP, BRAZIL

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 120卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(92)90366-Q

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We provide a perspective on current capabilities for optically monitoring and controlling epitaxial growth, and discuss examples taken from recent work at Bellcore.

引用

页码：71 / 77

页数：7

共 40 条

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[4] DIRECT OPTICAL MEASUREMENT OF SURFACE DIELECTRIC RESPONSES - INTERRUPTED GROWTH ON (001) GAAS
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[6] OPTICAL CONTROL OF GROWTH OF ALXGA1-XAS BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY
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[7] ASPNES DE, 1991, MATER RES SOC SYMP P, V222, P63, DOI 10.1557/PROC-222-63
[8] ASPNES DE, 1988, SPIE P, V946, P112
[9] ASPNES DE, UNPUB
[10] ASPNES DE, UNPUB J VACUUM SCI T

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