EXCIMER LASER ETCHING OF TRANSPARENT CONDUCTING OXIDES

被引：42

作者：

LUNNEY, JG

ONEILL, RR

SCHULMEISTER, K

机构：

[1] Department of Pure and Applied Physics, Trinity College

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 06期

关键词：

D O I：

10.1063/1.105380

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Laser etching of transparent conducting films of fluorine-doped tin oxide and indium-tin oxide has been investigated using an excimer laser at 248 nm. The etch depth per pulse as a function of laser fluence was measured and compared with the predictions of an explicit finite difference thermal model. Direct laser patterning of these films was demonstrated. The sheet resistance of a 50-mu-m-wide conducting channel formed by laser ablation was measured and compared with the value for the original film.

引用

页码：647 / 649

页数：3

共 7 条

[1]

BOYD IW, 1987, LASER PROCESSING THI

[2]

HOGAN M, 1987, APPL PHYS LETT, V53, P831

[3] PULSED LASER ETCHING OF HIGH-TC SUPERCONDUCTING FILMS [J].

INAM, A ;

WU, XD ;

VENKATESAN, T ;

OGALE, SB ;

CHANG, CC ;

DIJKKAMP, D .

APPLIED PHYSICS LETTERS, 1987, 51 (14) :1112-1114

[4]

KUNZ RR, 1989, APPL PHYS LETT, V54, P631

[5]

Samsonov G.V., 1973, OXIDE HDB

[6] EXCIMER LASER ETCHING OF POLYMERS [J].

SRINIVASAN, V ;

SMRTIC, MA ;

BABU, SV .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) :3861-3867

[7]

TOULOUKIAN YS, 1973, THERMOPHYSICAL PROPE, V10, P199

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