EPITAXIAL-GROWTH AND STRUCTURE OF ZNTE EVAPORATED ON TO GE IN VACUUM

被引：12
作者：
MUFTI, AR
HOLT, DB
机构：
来源：
JOURNAL OF MATERIALS SCIENCE | 1972年 / 7卷 / 06期
关键词：
D O I：
10.1007/BF00549382
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：694 / &
相关论文
共 50 条
[31]   STRUCTURE OF VACUUM EVAPORATED GE FILMS ON GAAS SUBSTRATES [J].
RYBKA, V ;
DUDROVA, E ;
SEVCIK, Z ;
KREJCI, P .
THIN SOLID FILMS, 1971, 8 (01) :R7-&
[32]   ATOMIC LAYER EPITAXIAL-GROWTH OF ZNSE, ZNTE, AND ZNSE-ZNTE STRAINED-LAYER SUPERLATTICES [J].
DOSHO, S ;
TAKEMURA, Y ;
KONAGAI, M ;
TAKAHASHI, K .
JOURNAL OF APPLIED PHYSICS, 1989, 66 (06) :2597-2602
[33]   PARTIAL EPITAXIAL-GROWTH OF NI2GE AND NIGE ON GE(111) [J].
HSIEH, YF ;
CHEN, LJ ;
MARSHALL, ED ;
LAU, SS .
THIN SOLID FILMS, 1988, 162 (1-2) :287-294
[34]   PREPARATION OF ZNSE-ZNTE HETEROJUNCTIONS BY LIQUID-PHASE EPITAXIAL-GROWTH [J].
FUJITA, S ;
MORIAI, F ;
ARAI, S ;
SAKAGUCHI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (12) :1841-1849
[35]   EPITAXIAL-GROWTH AND CHEMICAL VAPOR TRANSPORT OF ZNTE BY CLOSED-TUBE METHOD [J].
OGAWA, H ;
NISHIO, M ;
ARIZUMI, T .
JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :263-268
[36]   MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNTE AND CDTE ON (001) GAAS [J].
WAGNER, BK ;
OAKES, JD ;
SUMMERS, CJ .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :296-302
[37]   LIQUID-PHASE EPITAXIAL-GROWTH OF ZNTE AND ZN1-XCDXTE [J].
KANAMORI, A ;
OTA, T ;
TAKAHASHI, K .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) :1117-1122
[38]   INCORPORATION AND DIFFUSION KINETICS DURING EPITAXIAL-GROWTH ON GE(111) [J].
YOKOTSUKA, T ;
WILBY, MR ;
VVEDENSKY, DD ;
KAWAMURA, T ;
FUKUTANI, K ;
INO, S .
JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) :479-483
[39]   HETERO-EPITAXIAL GROWTH OF VACUUM EVAPORATED SILVER AND GOLD [J].
REICHELT, K ;
LUTZ, HO .
JOURNAL OF CRYSTAL GROWTH, 1971, 10 (01) :103-&
[40]   EPITAXIAL-GROWTH OF GE ON GAAS BY PLASMA-ENHANCED CVD [J].
IP, KT ;
FAIRMAN, RD .
JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (05) :713-714
12345