EPITAXIAL-GROWTH AND STRUCTURE OF ZNTE EVAPORATED ON TO GE IN VACUUM

被引:12
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MUFTI, AR
HOLT, DB
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10.1007/BF00549382
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T [工业技术];
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08 ;
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页码:694 / &
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[21]   EPITAXIAL-GROWTH OF HCP COBALT EVAPORATED ONTO LIF SUBSTRATES [J].
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