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- [11] SLOW RELAXATION OF THE CONDUCTANCE OF VARIABLE-GAP ALZGA1-ZAS SOLID-SOLUTION CRYSTALS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (06): : 667 - 671
- [12] SUPERINJECTION OF CARRIERS IN VARIABLE-GAP P-N STRUCTURES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 6 - 10
- [13] PROPAGATION OF A PULSE OF NONEQUILIBRIUM CARRIERS IN A VARIABLE-GAP SEMICONDUCTOR AT ARBITRARY EXCITATION RATES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 437 - 441
- [14] SPECTRAL CHARACTERISTICS OF VARIABLE-GAP STRUCTURES WITH A NONLINEAR COMPOSITION PROFILE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (09): : 915 - 917
- [15] PHOTOLUMINESCENCE INVESTIGATION OF THE COMPOSITION DEPENDENCE OF THE PARAMETERS OF VARIABLE-GAP AlxGa1 - x As SOLID SOLUTIONS. Soviet physics. Semiconductors, 1981, 15 (07): : 786 - 789
- [16] CHARACTERISTICS OF THE BEHAVIOR OF COPPER IMPURITIES AND RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN VARIABLE-GAP AlxGa1 - xAs:Cu SOLID SOLUTIONS. Soviet physics. Semiconductors, 1980, 14 (02): : 193 - 196
- [17] TEMPERATURE AND COMPOSITION DEPENDENCE OF THE ENERGY-BAND GAP OF PB1-XMNXS SOLID-SOLUTION APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (01): : 49 - 52
- [18] PHOTO-LUMINESCENCE INVESTIGATION OF THE COMPOSITION DEPENDENCE OF THE PARAMETERS OF VARIABLE-GAP ALXGA1-X AS SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (07): : 786 - 789
- [19] TRANSIENT PHOTOELECTRIC EFFECT IN A VARIABLE-GAP M-P-N STRUCTURE .1. PROPAGATION OF A PULSE OF NONEQUILIBRIUM CARRIERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (05): : 533 - 537
- [20] OSCILLATIONS IN THE SPECTRUM OF THE PHOTOCURRENT FLOWING IN A VARIABLE-GAP P-N STRUCTURE RESULTING FROM THE PHOTON DRIFT OF NONEQUILIBRIUM CARRIERS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 708 - 709