SELECTIVE SILICON EPITAXIAL-GROWTH BY LPCVD USING SILANE

被引：9
|
作者：
PARKER, GJ
STARBUCK, CMK
机构：
[1] Department of Electronics and Computer Science, The University of Southampton, Highfield, Southampto, 331 Newman Springs Rd. Red Bank
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 13期
关键词：
Epitaxy and epitaxial growth; Semiconductor devices and materials;
D O I：
10.1049/el:19900545
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Selective epitaxy Chlorine chemistry can have adverse effects on LPCVD systems and components. Results demonstrating the growth of selective silicon epitaxial layers in excess of 0-7 /«n thickness showing excellent uniformity and selectivity without the use of HC1 are presented. © 1990, The Institution of Electrical Engineers. All rights reserved.
引用
收藏
页码：831 / 832
页数：2
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