A Simple Plug-In Circuit for IGBT Gate Drivers to Monitor Device Aging Toward smart gate drivers

被引：28
作者：
Ali, Syed Huzaif [1 ,2 ]
Li, Xiong [1 ,2 ,3 ]
Kamath, Anant S. [3 ]
Akin, Bilal [1 ,4 ,5 ]
机构：
[1] Univ Texas Dallas, Richardson, TX 75083 USA
[2] Univ Texas Dallas, Engn & Comp Sci Dept, Power Elect & Drives Lab, Richardson, TX 75083 USA
[3] Texas Instruments Inc, Dallas, TX USA
[4] Toshiba Ind Div, Houston, TX USA
[5] Texas Instruments Inc, Embedded Control Grp C2000, Dallas, TX USA
来源：
IEEE POWER ELECTRONICS MAGAZINE | 2018年 / 5卷 / 03期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1109/MPEL.2018.2849653
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, a simple, cost-effective circuit is proposed for in situ monitoring of aging and degradation in discrete IGBT devices through the measurement of on-state collector-emitter voltage drop (Vce,on) and gate-threshold voltage (Vth). © 2014 IEEE.
引用
收藏
页码：45 / 55
页数：11
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