TIME-RESOLVED LUMINESCENCE OF CDSE MICROCRYSTALS

被引:35
作者
DNEPROVSKII, VS [1 ]
EFROS, AL [1 ]
EKIMOV, AI [1 ]
KLIMOV, VI [1 ]
KUDRIAVTSEV, IA [1 ]
NOVIKOV, MG [1 ]
机构
[1] PHYS TECH INST,LENINGRAD 194021,USSR
关键词
11;
D O I
10.1016/0038-1098(90)90675-2
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Abrupt intensity-dependent decrease of the recombination time of nonequilibrium charge carriers was observed in CdSe (120 Å radius) microcrystals. Such behaviour was assigned to the transition from linear radiative recombination to the nonradiative Auger process. © 1990.
引用
收藏
页码:555 / 557
页数:3
相关论文
共 11 条
[1]  
[Anonymous], 1982, FIZ TEKH POLUPROVODN
[2]   EVIDENCE OF STRONG AUGER RECOMBINATION IN SEMICONDUCTOR-DOPED GLASSES [J].
DEROUGEMONT, F ;
FREY, R ;
ROUSSIGNOL, P ;
RICARD, D ;
FLYTZANIS, C .
APPLIED PHYSICS LETTERS, 1987, 50 (23) :1619-1621
[3]  
Golubkov V. V., 1980, FIZ KHIM STEKLA, V6, P511
[4]   K-].P-] PERTURBATION-THEORY IN III-V COMPOUNDS AND ALLOYS - RE-EXAMINATION [J].
HERMANN, C ;
WEISBUCH, C .
PHYSICAL REVIEW B, 1977, 15 (02) :823-833
[5]   DEGENERATE 4-WAVE MIXING IN SEMICONDUCTOR-DOPED GLASSES [J].
JAIN, RK ;
LIND, RC .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1983, 73 (05) :647-653
[6]   PHOTOINDUCED REFRACTIVE-INDEX CHANGES AND PHOTOLUMINESCENCE IN SEMICONDUCTOR-DOPED GLASSES [J].
NATTERMANN, K ;
DANIELZIK, B ;
VONDERLINDE, D .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (02) :111-118
[7]  
Oka Y., 1976, Proceedings of the 1975 Oji Seminar on Physics of Highly Excited States in Solids, P105
[8]   ELECTRON-HOLE RECOMBINATION LIFETIMES IN A QUASI-ZERO-DIMENSIONAL ELECTRON-SYSTEM IN CDSXSE1-X [J].
SHUM, K ;
TANG, GC ;
JUNNARKAR, MR ;
ALFANO, RR .
APPLIED PHYSICS LETTERS, 1987, 51 (22) :1839-1841
[9]  
VANDISHEV UV, 1987, ZH EXPER TEOR FIZ PI, V46, P393
[10]   ULTRAFAST CARRIER AND GRATING LIFETIMES IN SEMICONDUCTOR-DOPED GLASSES [J].
YAO, SS ;
KARAGULEFF, C ;
GABEL, A ;
FORTENBERRY, R ;
SEATON, CT ;
STEGEMAN, GI .
APPLIED PHYSICS LETTERS, 1985, 46 (09) :801-802