OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY

被引：56

作者：

KRESSEL, H

HAWRYLO, FZ

ABRAHAMS, MS

BUIOCCHI, CJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1968年 / 39卷 / 11期

关键词：

D O I：

10.1063/1.1655934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5139 / &

共 16 条

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[3]

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[5] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS [J].

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HAWRYLO, FZ ;

LEFUR, P .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4059-+

[6] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

DUNSE, JU ;

NELSON, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&

[7]

KRESSEL H, 1968, MAY EL SOC M BOST

[8] 1.0- AND 1.28-EV EMISSION FROM GAAS DIODES [J].

MILLEA, MF ;

AUKERMAN, LW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) :1788-&

[9]

NELSON H, 1963, RCA REV, V24, P603

[10]

PANNISH MB, 1966, SOLID STATE ELECTRON, V9, P311

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