STOCHASTIC GEOMETRY-EFFECTS IN MOS-TRANSISTORS - COMMENT

[1] MODELING OF MOS-TRANSISTORS WITH NONRECTANGULAR GATE GEOMETRIES - COMMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 862 - 863

[2] STOCHASTIC GEOMETRY-EFFECTS IN MOS-TRANSISTORS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (04) : 865 - 870

[3] MODELING OF MOS-TRANSISTORS WITH NON-RECTANGULAR-GATE GEOMETRIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) : 1261 - 1269

[4] ZOMBORY L, 1978, 6TH P COLL MICR COMM, V1

[1] MODELING OF MOS-TRANSISTORS WITH NONRECTANGULAR GATE GEOMETRIES - COMMENT [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 862 - 863

[2] STOCHASTIC GEOMETRY-EFFECTS IN MOS-TRANSISTORS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1985, 20 (04) : 865 - 870

[3] MODELING OF MOS-TRANSISTORS WITH NON-RECTANGULAR-GATE GEOMETRIES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (08) : 1261 - 1269

[4] ZOMBORY L, 1978, 6TH P COLL MICR COMM, V1