STRAIN DEPENDENCE OF EFFECTIVE MASSES IN TETRAHEDRAL SEMICONDUCTORS

被引：49

作者：

ASPNES, DE ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.17.726

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：726 / 740

页数：15

共 40 条

[1] ABSTREITER G, UNPUBLISHED
[2] STRESS-MODULATED MAGNETOREFLECTANCE FOR DIRECT TRANSITIONS GAMMA 3/2/25'-!GAMMA2' AND GAMMA 1/2/25'-!GAMMA 2' IN GERMANIUM
AGGARWAL, RL
[J]. PHYSICAL REVIEW B, 1970, 2 (02): : 446 - &
[3] [Anonymous], SIMMETRIYA DEFORMATS
[4] PIEZORESISTANCE AND CONDUCTION-BAND MINIMA OF GAAS
ASPNES, DE
CARDONA, M
[J]. PHYSICAL REVIEW B, 1978, 17 (02) : 741 - 751
[5] SCHOTTKY-BARRIER ELECTROREFLECTANCE OF GE - NONDEGENERATE AND ORBITALLY DEGENERATE CRITICAL-POINTS
ASPNES, DE
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2297 - 2310
[6] ELECTROREFLECTANCE OF GAAS AND GAP TO 27 EV USING SYNCHROTRON RADIATION
ASPNES, DE
OLSON, CG
LYNCH, DW
[J]. PHYSICAL REVIEW B, 1975, 12 (06): : 2527 - 2538
[7] GENERAL THEORY OF PSEUDOPOTENTIALS
AUSTIN, BJ
SHAM, LJ
HEINE, V
[J]. PHYSICAL REVIEW, 1962, 127 (01): : 276 - &
[8] BASSANI F, 1966, SEMICONDUCT SEMIMET, V1, P21
[9] CALCULATION OF ENERGY-BAND PRESSURE COEFFICIENTS FROM DIELECTRIC THEORY OF CHEMICAL BOND
CAMPHAUSEN, DL
CONNELL, GAN
PAUL, W
[J]. PHYSICAL REVIEW LETTERS, 1971, 26 (04) : 184 - +
[10] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &