Topographical, compositional, and dopant contrast from cleavage surfaces of GaAs-AlxGa1-xAs superlattices

被引：0
|
作者：
Castell, MR
Perovic, DD
Howie, A
Ritchie, DA
Lavoie, C
Tiedje, T
机构：
[1] UNIV TORONTO,DEPT MET & MAT SCI,TORONTO,ON M5S 1A4,CANADA
[2] CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
[3] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER,BC V6T 1Z1,CANADA
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present images of (110) cleavage surfaces of GaAs-AlxGa1-xAs superlattices obtained by scanning force microscopy (SFM) and field-emission scanning electron microscopy. Topographical information is mapped by secondary electrons (SEs) and SFM, compositional differences are imaged through SEs and backscattered electrons (BSEs), and information on dopant type is gained through SEs only. Models are presented explaining the contrast observed in each case.
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页码：281 / 284
页数：4
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