Topographical, compositional, and dopant contrast from cleavage surfaces of GaAs-AlxGa1-xAs superlattices

被引：0
|
作者：
Castell, MR
Perovic, DD
Howie, A
Ritchie, DA
Lavoie, C
Tiedje, T
机构：
[1] UNIV TORONTO,DEPT MET & MAT SCI,TORONTO,ON M5S 1A4,CANADA
[2] CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND
[3] UNIV BRITISH COLUMBIA,DEPT PHYS,VANCOUVER,BC V6T 1Z1,CANADA
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | 1995年 / 146卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present images of (110) cleavage surfaces of GaAs-AlxGa1-xAs superlattices obtained by scanning force microscopy (SFM) and field-emission scanning electron microscopy. Topographical information is mapped by secondary electrons (SEs) and SFM, compositional differences are imaged through SEs and backscattered electrons (BSEs), and information on dopant type is gained through SEs only. Models are presented explaining the contrast observed in each case.
引用
收藏
页码：281 / 284
页数：4
相关论文
共 50 条
  • [21] INTRINSIC LUMINESCENCE OF AN ABRUPT GAAS-ALXGA1-XAS HETEROJUNCTION
    VASILEV, AM
    KOPEV, PS
    KOCHERESHKO, VP
    LEDENTSOV, NN
    MELTSER, BY
    URALTSEV, IN
    USTINOV, VM
    YAKOVLEV, DR
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (02): : 220 - 221
  • [22] DETECTIVITY AND NOISE OF PHOTOTRANSISTORS WITH GAAS-ALXGA1-XAS HETEROJUNCTIONS
    LUKYANCHIKOVA, NB
    TKACHENKO, NN
    KOROLKOV, VI
    AKHMEDOV, FA
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (03): : 303 - 306
  • [23] GAAS-ALXGA1-XAS STRIP BURIED HETEROSTRUCTURE LASERS
    TSANG, WT
    LOGAN, RA
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (06) : 451 - 469
  • [24] GAAS-ALXGA1-XAS DOUBLE HETEROSTRUCTURE INJECTION LASERS
    HAYASHI, I
    PANISH, MB
    REINHART, FK
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 1929 - &
  • [25] SURFACE RECOMBINATION VELOCITY AT GAAS-ALXGA1-XAS HETEROJUNCTIONS
    ETTENBERG, M
    KRESSEL, H
    JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (06) : 1257 - 1257
  • [26] INFLUENCE OF INDIRECT MINIMA ON ELECTRON-CONCENTRATION IN GAAS-ALXGA1-XAS SUPERLATTICES - A NUMERICAL STUDY
    IKONIC, Z
    MILANOVIC, V
    TJAPKIN, D
    PHYSICAL REVIEW B, 1985, 32 (12) : 8197 - 8202
  • [27] ON THE INTERPRETATION OF THERMOPOWER MEASUREMENTS IN GAAS-ALXGA1-XAS HETEROSTRUCTURES
    JALI, VM
    KUBAKADDI, SS
    MULIMANI, BG
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 143 (01): : K25 - K29
  • [28] PARABOLIC QUANTUM WELLS WITH THE GAAS-ALXGA1-XAS SYSTEM
    MILLER, RC
    GOSSARD, AC
    KLEINMAN, DA
    MUNTEANU, O
    PHYSICAL REVIEW B, 1984, 29 (06): : 3740 - 3743
  • [29] CALCULATION OF HOLE SUBBANDS AT THE GAAS-ALXGA1-XAS INTERFACE
    EKENBERG, U
    ALTARELLI, M
    PHYSICAL REVIEW B, 1984, 30 (06): : 3569 - 3570
  • [30] RADIATIVE RECOMBINATION IN GAAS-ALXGA1-XAS QUANTUM DOTS
    WANG, PD
    TORRES, CMS
    BENISTY, H
    WEISBUCH, C
    BEAUMONT, SP
    APPLIED PHYSICS LETTERS, 1992, 61 (08) : 946 - 948
12345