DIRECT MEASUREMENT OF VALLEY-ORBIT SPLITTING OF SHALLOW DONORS IN SILICON

被引：43

作者：

CASTNER, TG

机构：

来源：

PHYSICAL REVIEW LETTERS | 1962年 / 8卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.8.13

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：13 / &

共 16 条

[1] ELECTRON SPIN RESONANCE EXPERIMENTS ON SHALLOW DONORS IN GERMANIUM [J].

FEHER, G ;

WILSON, DK ;

GERE, EA .

PHYSICAL REVIEW LETTERS, 1959, 3 (01) :25-28

[2] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .2. ELECTRON SPIN RELAXATION EFFECTS [J].

FEHER, G ;

GERE, EA .

PHYSICAL REVIEW, 1959, 114 (05) :1245-1256

[3] ELECTRON SPIN RESONANCE EXPERIMENTS ON DONORS IN SILICON .1. ELECTRONIC STRUCTURE OF DONORS BY THE ELECTRON NUCLEAR DOUBLE RESONANCE TECHNIQUE [J].

FEHER, G .

PHYSICAL REVIEW, 1959, 114 (05) :1219-1244

[4]

FINN CBP, 1960, P PHYS SOC LOND, V77, P261

[5] SPIN-LATTICE RELAXATION OF SHALLOW DONOR STATES IN GE AND SI THROUGH A DIRECT PHONON PROCESS [J].

HASEGAWA, H .

PHYSICAL REVIEW, 1960, 118 (06) :1523-1534

[6] ELECTRON SPIN-LATTICE RELAXATION IN PHOSPHORUS-DOPED SILICON [J].

HONIG, A ;

STUPP, E .

PHYSICAL REVIEW, 1960, 117 (01) :69-83

[7] THEORY OF DONOR LEVELS IN SILICON [J].

KOHN, W .

PHYSICAL REVIEW, 1955, 97 (06) :1721-1721

[8] THEORY OF DONOR STATES IN SILICON [J].

KOHN, W ;

LUTTINGER, JM .

PHYSICAL REVIEW, 1955, 98 (04) :915-922

[9] SPIN RELAXATION IN FREE RADICAL SOLUTIONS EXHIBITING HYPERFINE STRUCTURE [J].

LLOYD, JP ;

PAKE, GE .

PHYSICAL REVIEW, 1954, 94 (03) :579-591

[10] HALL EFFECT AND IMPURITY LEVELS IN PHOSPHORUS-DOPED SILICON [J].

LONG, D ;

MYERS, J .

PHYSICAL REVIEW, 1959, 115 (05) :1119-1121

← 1 2 →