MEMORY EFFECT IN ZNS - MN AC THIN-FILM ELECTROLUMINESCENT DEVICES WITH LOW MN CONCENTRATION

被引:5
作者
MCCLEAN, IP
THOMAS, CB
机构
[1] Department of Electrical and Electronic Engineering, University of Bradford, Bradford, West Yorkshire
关键词
D O I
10.1109/16.210196
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Electroluminescent (EL) memory is exhibited in ZnS: Mn ac thin-film EL (ACTFEL) devices with Mn concentrations between 0.2 and 0.7 wt % (+/- 0.2 %). Maximum hysteresis width is observed for Mn concentrations of 0.3 wt % (+/- 0.2%), compared to 1 wt % for previous devices exhibiting memory. The phenomenon is seen in Zn-rich, but not in S-rich ZnS:Mn films. Low-field electrical characterization has previously shown that the presence of shallow donor sites in Zn-rich ZnS at 0.11 eV below the conduction band. Electron ejection of donors near the interfaces is believed to sustain electroluminescence at voltages below threshold. The trap is thought to be created by an excess of S vacancies (donor sites) over other trapping or recombination centers.
引用
收藏
页码:898 / 902
页数:5
相关论文
共 28 条
[1]   EXPERIMENTAL RESULTS ON THE STABILITY OF AC THIN-FILM ELECTROLUMINESCENT DEVICES [J].
ALT, PM ;
DOVE, DB ;
HOWARD, WE .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) :5186-5199
[2]  
ALT PM, 1984, P SID, V25, P123
[3]   STUDY OF HIGHLY CONCENTRATED ZNS-MN ACTFEL DEVICES [J].
BENOIT, J ;
BENALLOUL, P ;
GEOFFROY, A ;
BALBO, N ;
BARTHOU, C ;
DENIS, JP ;
BLANZAT, B .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02) :709-717
[4]  
CRANTON WM, 1992, UNPUB SEMICOND SCI T
[5]  
FISCHER AG, 1964, ELECTROLUMINESCENCE, P541
[6]   ENERGY-TRANSFER PROCESSES IN (ZN, MN)S MIXED-CRYSTALS [J].
GOEDE, O ;
THONG, DD .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 124 (01) :343-353
[7]   MEMORY EFFECT IN AC THIN-FILM ZNS-MN ELECTROLUMINESCENT DEVICES PREPARED BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J].
HIRABAYASHI, K ;
KOZAWAGUCHI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (05) :L379-L381
[8]  
HOOGENSTRAATEN W, 1958, PHILIPS RES REPS, V13, P357
[9]   MEMORY IN THIN-FILM ELECTROLUMINESCENT DEVICES [J].
HOWARD, WE .
JOURNAL OF LUMINESCENCE, 1981, 23 (1-2) :155-173
[10]   A SIMPLE-MODEL FOR THE HYSTERETIC BEHAVIOR OF ZNS-MN THIN-FILM ELECTROLUMINESCENT DEVICES [J].
HOWARD, WE ;
SAHNI, O ;
ALT, PM .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :639-647