LIGHT-INDUCED DEFECTS IN THERMAL ANNEALED HYDROGENATED AMORPHOUS-SILICON

被引：1

作者：

SERRA, J ^{[1
]}

BERTOMEU, J ^{[1
]}

SARDIN, G ^{[1
]}

ROCH, C ^{[1
]}

ASENSI, JM ^{[1
]}

ANDREU, J ^{[1
]}

MORENZA, JL ^{[1
]}

机构：

[1] UNIV BARCELONA,DEPT APPL PHYS & ELECTR,AVDA DIAGONAL 647,E-08028 BARCELONA,SPAIN

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1992年 / 28卷 / 01期

关键词：

D O I：

10.1016/0927-0248(92)90106-Y

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The metastable defects of a-Si: H samples annealed at temperatures in the 300-550-degrees-C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable defect density shows an almost linear correlation with the decrease in the hydrogen content of the samples, determined by IR transmission spectroscopy and thermal desorption spectroscopy.

引用

页码：49 / 57

页数：9

共 50 条

[41] THE CONNECTION BETWEEN DISPERSIVE HYDROGEN MOTION AND THE KINETICS OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON
JACKSON, WB
PHILOSOPHICAL MAGAZINE LETTERS, 1989, 59 (02) : 103 - 108
[42] PICOSECOND PHOTOINDUCED ABSORPTION AS A PROBE OF METASTABLE LIGHT-INDUCED DEFECTS IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON
GUSTAFSON, TL
SCHER, H
ROBERTS, DM
COLLINS, RW
PHYSICAL REVIEW LETTERS, 1988, 60 (02) : 148 - 151
[43] ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON ALLOYS
DENBOER, W
GUHA, S
JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5539 - 5541
[44] Light-induced defect creation processes and light-induced defects in hydrogenated amorphous silicon☆
Morigaki, Kazuo
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2020, 90 (02):
[45] Light-induced defects in hydrogenated amorphous silicon germanium alloys
Cohen, JD
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 78 (1-4) : 399 - 424
[46] LIGHT-INDUCED ANNEALING OF PHOTOCREATED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON
ZHANG, Q
NISHINO, T
KUMEDA, M
SHIMIZU, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1995, 34 (4B): : L483 - L486
[47] LIGHT-INDUCED EFFECTS ON THE RAPIDLY COOLED STATE IN HYDROGENATED AMORPHOUS-SILICON
YOON, JH
KIM, MS
LEE, CC
PHYSICAL REVIEW B, 1989, 39 (14): : 10251 - 10253
[48] ORIGIN OF SATURATED LIGHT-INDUCED DEFECT DENSITY IN HYDROGENATED AMORPHOUS-SILICON
YOON, JH
JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 1838 - 1843
[49] LIGHT-INDUCED DEFECT STUDIES IN HYDROGENATED AMORPHOUS-SILICON BY EXOELECTRON EMISSION
BHIDE, RS
MANORAMA, V
PAWAR, SK
BABRAS, S
BHORASKAR, SV
BHIDE, VG
APPLIED PHYSICS LETTERS, 1990, 57 (15) : 1528 - 1530
[50] LIGHT-INDUCED EFFECTS IN HYDROGENATED AMORPHOUS-SILICON AT LOW-TEMPERATURES
LEE, C
YOON, JH
JANG, J
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 393 - 396

← 1 2 3 4 5 →