LIGHT-INDUCED DEFECTS IN THERMAL ANNEALED HYDROGENATED AMORPHOUS-SILICON

被引：1

作者：

SERRA, J ^{[1
]}

BERTOMEU, J ^{[1
]}

SARDIN, G ^{[1
]}

ROCH, C ^{[1
]}

ASENSI, JM ^{[1
]}

ANDREU, J ^{[1
]}

MORENZA, JL ^{[1
]}

机构：

[1] UNIV BARCELONA,DEPT APPL PHYS & ELECTR,AVDA DIAGONAL 647,E-08028 BARCELONA,SPAIN

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1992年 / 28卷 / 01期

关键词：

D O I：

10.1016/0927-0248(92)90106-Y

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The metastable defects of a-Si: H samples annealed at temperatures in the 300-550-degrees-C range have been studied by photothermal deflection spectroscopy (PDS). The light-soaked samples show an increase in optical absorption in the 0.8 to 1.5 eV range. The metastable defect density decreases when the annealing temperature increases, while the defect density increases. This decrease in the metastable defect density shows an almost linear correlation with the decrease in the hydrogen content of the samples, determined by IR transmission spectroscopy and thermal desorption spectroscopy.

引用

页码：49 / 57

页数：9

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