ADSORPTION OF BISMUTH ON SI(110) SURFACES STUDIED BY SCANNING-TUNNELING-MICROSCOPY

被引：11

作者：

SAKAMA, H ^{[1
]}

KAWAZU, A ^{[1
]}

SUEYOSHI, T ^{[1
]}

SATO, T ^{[1
]}

IWATSUKI, M ^{[1
]}

机构：

[1] JEOL LTD,TOKYO 196,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 6B期

关键词：

SCANNING TUNNELING MICROSCOPY; SI(110); BISMUTH; PHASE TRANSITION;

D O I：

10.1143/JJAP.32.2929

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bi-adsorbed Si(110) surfaces are investigated by scanning tunneling microscopy (STM). The 2 x 3 structures where two protrusions are observed in a unit cell at the positive and negative sample bias voltages are formed at 700 K. The up and down terraces of the clean 16 x 2 structure still remain when Bi atoms are deposited at room temperature, while a rather flat surface with boundaries parallel to [-1, 1, 2] (or [1, -1, 2]) is formed by the adsorption of Bi at 570 K. The 2 x 3 structures of short-range order are also formed on the flat surface at 570 K.

引用

页码：2929 / 2933

页数：5

共 18 条

[1] GEOMETRIC AND ELECTRONIC-STRUCTURE OF SB ON SI(111) BY SCANNING TUNNELING MICROSCOPY [J].