EQUILIBRIUM PROPERTIES OF CD1-XMGXTE SOLID-SOLUTIONS

An investigation was made of electrophysical properties of Cd1-xMgxTe solid solutions, grown by the Bridgman method, as a function of their composition (0 less-than-or-equal-to x less-than-or-equal-to 0.3). The investigated samples had p-type conduction. In the range 0 less-than-or-equal-to x less-than-or-equal-to 0.1 the hole densities were practically constant and were within the range (3-5) X 10(15) cm-3. A further increase in the amount of Mg (x > 0.1) resulted in a transition to a semiinsulating state [p = (2-6) x 10(7) cm-3]. This transition was attributed to the compensating effect of accidental impurities and a simultaneous reduction in the cadmium vacancy concentration. The carrier mobility in the solid solutions was found to be largely determined by the scattering on fluctuations of the composition.