Spin-dependent current in silicon p-n junction diodes

被引：0

作者：

Tretyak, O. V. ^{[1
]}

Kozonushchenko, O. I. ^{[1
]}

Krivokhizha, K. V. ^{[1
]}

Revenko, A. S. ^{[1
]}

机构：

[1] Taras Shevchenko Kyiv Natl Univ, Radiophys Dept, 64 Volodymyrska Str, UA-01601 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2010年 / 13卷 / 01期

关键词：

EDMR; ESR; polished surface; paramagnetic states; inversion layer;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction). The dependence of relative changes in the amplitude of a signal under resonance conditions and the total value of current through the diode were investigated. We have found the presence of inversion channel on the surface of p-n junction and proposed the model of the influence of spin resonance on the channel conductivity. The upper value of the time constant inherent to the spin-dependent process was determined as approximately 10(-6) s. The influence of the spin-dependent process on the charge state in inversion channel has been discussed.

引用

页码：95 / 97

页数：3

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