Spin-dependent current in silicon p-n junction diodes

被引：0
|
作者：
Tretyak, O. V. [1 ]
Kozonushchenko, O. I. [1 ]
Krivokhizha, K. V. [1 ]
Revenko, A. S. [1 ]
机构：
[1] Taras Shevchenko Kyiv Natl Univ, Radiophys Dept, 64 Volodymyrska Str, UA-01601 Kiev, Ukraine
来源：
SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2010年 / 13卷 / 01期
关键词：
EDMR; ESR; polished surface; paramagnetic states; inversion layer;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have used electrically detected spin-dependent paramagnetic resonance to investigate the non-equilibrium conductivity in a silicon diode. In order to create paramagnetic centers, we used diode with a polished surface (that includes p-n junction). The dependence of relative changes in the amplitude of a signal under resonance conditions and the total value of current through the diode were investigated. We have found the presence of inversion channel on the surface of p-n junction and proposed the model of the influence of spin resonance on the channel conductivity. The upper value of the time constant inherent to the spin-dependent process was determined as approximately 10(-6) s. The influence of the spin-dependent process on the charge state in inversion channel has been discussed.
引用
收藏
页码：95 / 97
页数：3
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