DIODE-PUMPED MICROCHIP LASERS ELECTROOPTICALLY Q-SWITCHED AT HIGH PULSE REPETITION RATES

被引：37

作者：

ZAYHOWSKI, JJ

DILL, C

机构：

[1] Lincoln Laboratory, Massachusetts Institute of Technology, Lexington, MA, 02173-9108

来源：

OPTICS LETTERS | 1992年 / 17卷 / 17期

关键词：

D O I：

10.1364/OL.17.001201

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have obtained almost-equal-to 50 mW of time-averaged 1.064-mu-m output power from a diode-pumped, electro-optically Q-switched Nd:YAG microchip laser at pulse repetition rates between 5 and 500 kHz. The FWHM of the output pulses is proportional to the repetition rate, varying from <300 ps at low repetition rates to 13.3 ns at 500 kHz. The multikilowatt peak power obtained at low repetition rates allows for efficient nonlinear frequency conversion and is sufficient to ablate thin layers of metal.

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页码：1201 / 1203

页数：3

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