RE-EMISSION OF SPUTTERED SIO2 DURING GROWTH AND ITS RELATION TO FILM QUALITY

被引:52
作者
MAISSEL, LI
JONES, RE
STANDLEY, CL
机构
关键词
D O I
10.1147/rd.142.0176
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
引用
收藏
页码:176 / &
相关论文
共 11 条
[1]  
DAVIDSE PD, 1966, 1965 P 3 INT VAC C
[2]  
DEVIENNE CR, 1952, COMPT REND, V234, P80
[3]  
FRENKEL W, 1924, Z PHYS, V25, P117
[4]   RE-EMISSION COEFFICIENTS OF SI AND SIO2 FILMS DEPOSITED THROUGH RF AND DC SPUTTERING [J].
JONES, RE ;
STANDLEY, CL ;
MAISSEL, LI .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (12) :4656-&
[5]   EFFECT OF OXYGEN ON RF-SPUTTERING RATE OF SIO2 [J].
JONES, RE ;
WINTERS, HF ;
MAISSEL, LI .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1968, 5 (03) :84-&
[6]   APPLICATION OF RF DISCHARGES TO SPUTTERING [J].
KOENIG, HR ;
MAISSEL, LI .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :168-&
[8]   EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J].
PLISKIN, WA ;
GNALL, RP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :872-873
[9]  
PLISKIN WA, DEPOSITED THIN FILM